In our research group, we aim to contribute to the development of modern 2D electronic devices that positively impact society. Our focus is on the group of 2D materials—such as graphene, MoS₂, hBN, and emerging materials—known for their rich and diverse properties, which have continued to expand rapidly since the groundbreaking discovery of graphene over two decades ago.

We strive to gain a deep understanding of functional electronic devices (transistors, solar cells, sensors, etc.) and seek to enhance their performance or even introduce new device concepts by leveraging the unique properties of 2D materials, including novel characteristics that we may discover ourselves. Additionally, we explore the combination of 2D materials, such as in heterostructure form, to tailor their properties and functionalities more effectively.

Research is continuously expanding and becoming increasingly complex. Researchers are delving into deep specializations that contribute to advancements in electronic devices and novel applications. The field of computational science, as applied to electronic devices, is itself a vast and specialized domain with many valuable research applications. In our group, we primarily focus on Density Functional Theory (DFT), utilizing tools like the Vienna Ab initio Simulation Package (VASP) and Quantum Espresso (QE). We also employ specialized software, such as the Alloy Theoretic Automated Toolkit (ATAT), when necessary.

Our research philosophy in computational work is to shed light on experimental findings or guide experimentalists toward impactful research directions. This stems from my background as an experimentalist who transitioned to computational work. As such, our group aims to ensure that our theoretical efforts are closely aligned with real-life experimental outcomes.

Our computational research focuses on bandgap engineering, exploring various approaches including novel materials (such as 2D-GaN), innovative material combinations (2D heterostructures), alloying techniques (2D alloys), and carrier concentration manipulation (2D doping). We are constantly seeking new methods and ideas, so if you believe your techniques can contribute to our research goals, please feel free to reach out!

Our group operates as an opportunistic research team. Currently, we do not conduct experimental research within the group, but as mentioned in the computational research section, I (the PI of the group) have extensive experience in experimental research from my own PhD work. After spinning photoresist onto a wafer over a thousand times, it's something you never forget. We remain open to any fruitful experimental opportunities that arise.

Our research expertise spans the entire spectrum of device fabrication, beginning with 2D material synthesis methods (such as CVD or epitaxial growth), followed by characterization techniques (Raman spectroscopy, AFM, SEM), electron device fabrication steps (cleanroom photolithography, e-beam deposition, etching, and lift-off lithography), and concluding with electrical characterization (IV probe stations).

Previous hands-on experimental work included the epitaxial growth of monolayer and bilayer graphene on SiC wafers via high-temperature furnace sublimation of silicon atoms. We successfully achieved large-area transfers of high-quality epitaxial graphene. Additionally, transistors and TLM devices were fabricated and tested to report their electronic performance. Experimental work also extended to other 2D materials, including MoS₂/graphene heterostructure devices, van der Waals graphene, and the CVD growth of hexagonal boron nitride.

Experimental transfer techniques for epitaxial graphene.